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On the unifying admittance calculationSHI-LANG WANG.Journal of the Franklin Institute. 1986, Vol 322, Num 2, pp 73-78, issn 0016-0032Article

The dual RF admittance bridgeGRNO, L.IEEE transactions on instrumentation and measurement. 1985, Vol 34, Num 2, pp 206-208, issn 0018-9456Article

Photoadmittance in amorphous-silicon Schottky diodesDRAZIN, J. P. V; ANDERSON, J. C.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1986, Vol 54, Num 1, pp 19-36, issn 0141-8637Article

Characterization of metallophthalocyanine-metal contacts: electrical properties in a large frequency rangeBOUZID BOUDJEMA; GUILLAUD, G; GAMOUDI, M et al.Journal of applied physics. 1984, Vol 56, Num 8, pp 2323-2329, issn 0021-8979Article

Bounds of uncertain interference between closely located antennasHIRASAWA, K.IEEE transactions on electromagnetic compatibility. 1984, Vol 26, Num 3, pp 129-133, issn 0018-9375Article

New negative conductance in GaAs n⁺-n-n⁺ ballistic diode ―time-dependent computer simulation―AISHIMA, A; FUKUSHIMA, Y.Japanese journal of applied physics. 1983, Vol 22, Num 12, pp 1889-1892, issn 0021-4922Article

ADMITTANCE CORRECTION FACTORS FOR GAP EXCITED CYLINDRICAL ANTENNAEWILLIAMSON AG.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 55; NO 3; PP. 441-448; BIBL. 6 REF.Article

A NONLINEAR INDEFINITE ADMITTANCE MATRIX FOR MODELING ELECTRONIC DEVICES.ARREOLA JI; LINDHOLM FA.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 765-767; BIBL. 11 REF.Article

EQUATION GENERALISEE DU BILAN DES PUISSANCES ACTIVES DANS UN OSCILLATEUR SYNCHRONISEFOMIN NN.1977; RADIOTEKHNIKA; S.S.S.R.; DA. 1977; VOL. 32; NO 5; PP. 42-47; BIBL. 11 REF.Article

ACTIVE BRIDGE FOR MEASURING THE ADMITTANCE PARAMETERS OF THE TRANSISTOR.PRASADA RAO DBSJ; SINGH BP.1977; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1977; VOL. 15; NO 11; PP. 783-786; BIBL. 3 REF.Article

ALGORITHME D'INVERSION DES BRANCHES D'UN CIRCUIT ELECTRIQUE LINEAIRESHAKIROV MA.1976; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1976; VOL. 19; NO 11; PP. 61-68; BIBL. 3 REF.Article

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LE CONVERTISSEUR D'IMAGES ELECTRONIQUES BI-PLANAR EN TANT QU'ELEMENT DU CIRCUIT ELECTRIQUEKRASNOV VF; TUROVSKIJ LA.1979; ZH. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1979; VOL. 49; NO 9; PP. 1966-1969; BIBL. 3 REF.Article

ETUDE ET MISE AU POINT DE TRANSDUCTEURS PIEZOELECTRIQUES ULTRASENSIBLES FONCTIONNANT EN MILIEU LIQUIDE = Study and elaboration of ultra-sensitive piezoelectric transducers for analytical applicationsBouché Pillon, David; Gabrielli, Claude.1996, 258 p.Thesis

AC response near percolation threshold: transfer matrix calculation in 2DBUG, A. L. R; GREST, G. S; COHEN, M. H et al.Journal of physics. A, mathematical and general. 1986, Vol 19, Num 6, pp L323-L328, issn 0305-4470Article

Switched capacitor filters with a row dominant nodal admittance matrixHASLER, M; MORAD SAGHAFI.International journal of circuit theory and applications. 1986, Vol 14, Num 4, pp 295-304, issn 0098-9886Article

Complex models of surface state admittanceNAKHAMANSON, R. S; SEVASTIANOV, S. B.International journal of electronics. 1984, Vol 56, Num 3, pp 287-297, issn 0020-7217Article

Admittance measurements on protein layers adsorbed at the Pt/solution interface : effect of d.c. potential and a.c. fieldMATSUMURA, H; KLEIJN, J. M.Colloids and surfaces. B, Biointerfaces. 1993, Vol 1, Num 5, pp 277-282, issn 0927-7765Article

Spectral domain analysis of wall admittances for circular and annular microstrip patches and the effect of surface wavesBHATTACHARYYA, A. K; GARG, R.IEEE transactions on antennas and propagation. 1985, Vol 33, Num 10, pp 1067-1073, issn 0018-926XArticle

Admittance of gallium arsenide p⁺n diodes with lateral base contactLEHOVEC, K; ZULEEG, R.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 785-795, issn 0038-1101Article

Description and realization of resistive n-port neworksBERTRAND, J.IEEE transactions on circuits and systems. 1983, Vol 30, Num 10, pp 768-770, issn 0098-4094Article

A.C. ADMITTANCE STUDIES OF SCHOTTKY DIODES USING A VECTOR-ANALYZER-SYSTEMENGEMANN J.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 5; PP. 467-474; BIBL. 7 REF.Article

METHODE ENERGETIQUE POUR DETERMINER LES ADMITTANCES DES TRANSDUCTEURS PIEZOELECTRIQUESPAVLENKO OG.1977; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1977; VOL. 47; NO 12; PP. 2594-2600; BIBL. 9 REF.Article

On revising the definition of the dielectric loss angleSHI-LIANG WANG.Journal of the Franklin Institute. 1987, Vol 324, Num 3, pp 387-395, issn 0016-0032Article